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VISHAY
GZF3V6C to GZF91C
Vishay Semiconductors
Zener Diodes
Features
* Silicon Planar Power Zener Diodes. * Low profile surface-mount package. * Low leakage current * High temperature soldering: 260 C/10 sec. at terminals
17249
Mechanical Data
Case: JEDEC DO-219AB (SMF(R)) Plastic Case
Packaging codes/options: GS18 - 10 K per 13 " reel, (8 mm tape), 50 K/box GS08 - 3 K per 7 " reel, (8 mm tape), 30 K/box Weight: approx. 0.01 g
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Zener current (see Table "Characteristics") Power dissipation TA = 25 C Ptot Test condition Symbol Value see page 2 8001) mW Unit
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( 40 m thick)
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air1) Maximum junction temperature Storage temperature range 1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( 40 m thick) Tj TSTG 150 - 55 to + 150 C C Test condition Symbol RJA Value 180 Unit K/W
Document Number 85769 Rev. 1.7, 28-Jan-04
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GZF3V6C to GZF91C
Vishay Semiconductors Electrical Characteristics
Maximum VF = 1.2 V at IF = 200 mA Partnumber Marking Code Zener Voltage Range1) VZ @ IZT V min GZF3V6C GZF3V9C GZF4V3C GZF4V7C GZF5V1C GZF5V6C GZF6V2C GZF6V8C GZF7V5C GZF8V2C GZF9V1C GZF10C GZF11C GZF12C GZF13C GZF15C GZF16C GZF18C GZF20C GZF22C GZF24C GZF27C GZF30C GZF33C GZF36C GZF39C GZF43C GZF47C GZF51C GZF56C GZF62C GZF68C GZF75C GZF82C GZF91C
1)
VISHAY
Differential Resistance rdif @ IZ typ 4 4 4 3 3 2 2 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 max 8 8 7 7 6 4 3 3 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200
Temperature Coefficient Z @ I Z %/C min -0.14 -0.14 -0.12 -0.1 -0.08 -0.04 -0.01 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 max -0.04 -0.04 -0.02 0 -0.2 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13
Test Current IZT mA 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5
Reverse Current at Reverse Voltage IR A max 100 50 25 10 5 10 5 10 50 10 10 7 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 3 3 3 5 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 VR V
max 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96
W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 X6 X7
3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85
Pulse test: tp 5 ms
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Document Number 85769 Rev. 1.7, 28-Jan-04
VISHAY
GZF3V6C to GZF91C
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
10
mA 3
10 2 10 IF 1 10 10
-1 TJ = 100 C TJ = 25 C
-2
10 -3 10 10
17364
-4
-5
0
0.2
0.4
0.6 VF
0.8
1V
Figure 1. Forward characteristics
mW
800 P tot 600
400
200
0
17365
100
Tamb
200 C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF 1000
7 5 4 3 2
TJ = 25 C V R = 1V
V R = 2V
Ctot
100
7 5 4 3 2 VR = 2V V R = 1V
17366
10 1
2
3
45
10
VZ
2
345
100 V
Figure 3. Capacitance vs. Zener Voltage
Document Number 85769 Rev. 1.7, 28-Jan-04
www.vishay.com 3
GZF3V6C to GZF91C
Vishay Semiconductors Package Dimensions in mm
Cathode Band T op View
VISHAY
1.8 0.1
1.0 0.2
5 0.98 0.1
2.8 0.1
0.05 - 0.30
5 Detail Z enlarged
Z
0.60 0.25
0.00 - 0.10 3.7 0.2
1.6
1.3
1.4
17247
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Document Number 85769 Rev. 1.7, 28-Jan-04
VISHAY
Blistertape fur SMF
GZF3V6C to GZF91C
Vishay Semiconductors
PS
18513
Document Number 85769 Rev. 1.7, 28-Jan-04
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GZF3V6C to GZF91C
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85769 Rev. 1.7, 28-Jan-04

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